Cluster emission under femtosecond laser ablation of silicon

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dc.creatorBulgakov, Alexander V.
dc.creatorOzerov, Igor
dc.creatorMarine, Wladimir
dc.date2003-11-24
dc.date2004-03-10
dc.date.accessioned2026-07-07T05:50:35Z
dc.date.available2026-07-07T05:50:35Z
dc.descriptionRich populations of clusters have been observed after femtosecond laser ablation of bulk silicon in vacuum. Size and velocity distributions of the clusters as well as their charge states have been analyzed by reflectron time-of-flight mass spectrometry. An efficient emission of both neutral silicon clusters Sin (up to n = 6) and their cations Sin+ (up to n = 10) has been observed. The clusters are formed even at very low laser fluences, below ablation threshold, and their relative yield increases with fluence. We show the dependencies of the cluster yield as well as the expansion dynamics on both laser wavelength and laser fluence. The mechanisms of the cluster formation are discussed.
dc.identifierhttps://arxiv.org/abs/physics/0311116
dc.identifierhttp://arxiv.org/abs/physics/0311116
dc.identifierThin Solid Films 453-454 (2004) 557-561
dc.identifierdoi:10.1016/j.tsf.2003.11.136
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/85754
dc.subjectAtomic and Molecular Clusters
dc.subjectMaterials Science
dc.subjectChemical Physics
dc.subjectPlasma Physics
dc.titleCluster emission under femtosecond laser ablation of silicon
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