Oxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films

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dc.creatorJang, S. Y.
dc.creatorLee, D.
dc.creatorLee, J. -H.
dc.creatorNoh, T. W.
dc.creatorJo, Y.
dc.creatorJung, M. -H.
dc.creatorChung, J. -S.
dc.date2009-01-29
dc.date.accessioned2026-07-07T12:35:35Z
dc.date.available2026-07-07T12:35:35Z
dc.descriptionEpitaxial thin films of hexagonal ErMnO3 fabricated on Pt(111)/Al2O3(0001) and YSZ(111) substrates exhibited both ferroelectric character and magnetic ordering at low temperatures. As the temperature was reduced, the ErMnO3 films first showed antiferromagnetism. At lower temperatures, the films deposited at lower oxygen partial pressures exhibited spin glass behavior. This re-entrant spin glass behavior was attributed to competition between an antiferromagnetic interaction in the hexagonal geometry and a ferromagnetic interaction caused by a change in Mn valence induced by excess electrons from the oxygen vacancies.
dc.descriptionPublished in Applied Physics Letters
dc.identifierhttps://arxiv.org/abs/0901.4651
dc.identifierhttp://arxiv.org/abs/0901.4651
dc.identifierApplied Physics Letters 93, 162507 (2008)
dc.identifierdoi:10.1063/1.3006325
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/217812
dc.subjectStrongly Correlated Electrons
dc.subjectOther Condensed Matter
dc.titleOxygen vacancy induced re-entrant spin glass behavior in multiferroic ErMnO3 thin films
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