Spin-dependent transport properties in GaMnAs-based spin hot-carrier transistors

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dc.creatorMizuno, Yosuke
dc.creatorOhya, Shinobu
dc.creatorHai, Pham Nam
dc.creatorTanaka, Masaaki
dc.date2007-02-09
dc.date.accessioned2026-07-07T07:45:44Z
dc.date.available2026-07-07T07:45:44Z
dc.descriptionWe have investigated the spin-dependent transport properties of GaMnAs-based three-terminal semiconductor spin hot-carrier transistor (SSHCT) structures. The emitter-base bias voltage VEB dependence of the collector current IC, emitter current IE, and base current IB shows that the current transfer ratio alpha (= IC / IE) and the current gain beta (= IC / IB) are 0.8-0.95 and 1-10, respectively, which means that GaMnAs-based SSHCTs have current amplifiability. In addition, we observed an oscillatory behavior of the tunneling magnetoresistance (TMR) ratio with the increasing bias, which can be explained by the resonant tunneling effect in the GaMnAs quantum well.
dc.description10 pages, 4 figures, submitted to APL
dc.identifierhttps://arxiv.org/abs/cond-mat/0702239
dc.identifierhttp://arxiv.org/abs/cond-mat/0702239
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/123632
dc.subjectMaterials Science
dc.titleSpin-dependent transport properties in GaMnAs-based spin hot-carrier transistors
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