In-Chain Tunneling Through Charge-Density Wave Nanoconstrictions and Break-Junctions

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dc.creatorO'Neill, K.
dc.creatorSlot, E.
dc.creatorThorne, R. E.
dc.creatorvan der Zant, H. S. J.
dc.date2005-09-07
dc.date2006-01-09
dc.date.accessioned2026-07-07T06:41:43Z
dc.date.available2026-07-07T06:41:43Z
dc.descriptionWe have fabricated longitudinal nanoconstrictions in the charge-density wave conductor (CDW) NbSe$_{3}$ using a focused ion beam and using a mechanically controlled break-junction technique. Conductance peaks are observed below the T$_{P1}$$=145 $K and T$_{P2}$$=59 $K CDW transitions, which correspond closely with previous values of the full CDW gaps $2Δ_{1}$ and $2Δ_{2}$ obtained from photo-emission. These results can be explained by assuming CDW-CDW tunneling in the presence of an energy gap corrugation $ε_{2}$ comparable to $Δ_{2}$, which eliminates expected peak at $Δ_{1}+Δ_{2}$. The nanometer length-scales our experiments imply indicate that an alternative explanation based on tunneling through back-to-back CDW-normal junctions is unlikely.
dc.description5 pages, 3 figures, submitted to physical review letters
dc.identifierhttps://arxiv.org/abs/cond-mat/0509171
dc.identifierhttp://arxiv.org/abs/cond-mat/0509171
dc.identifierPhysical Review Letters 96, 096402 (2006)
dc.identifierdoi:10.1103/PhysRevLett.96.096402
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/101768
dc.subjectStrongly Correlated Electrons
dc.titleIn-Chain Tunneling Through Charge-Density Wave Nanoconstrictions and Break-Junctions
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