Field-Effect Persistent Photoconductivity

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dc.creatorDe Poortere, E. P.
dc.creatorShkolnikov, Y. P.
dc.creatorShayegan, M.
dc.date2003-02-21
dc.date2003-02-22
dc.date.accessioned2026-07-07T02:49:44Z
dc.date.available2026-07-07T02:49:44Z
dc.descriptionWe report a persistent increase or decrease in the two-dimensional electron density of AlAs or GaAs quantum wells flanked by AlGaAs barriers, brought about by illuminating the samples at T ~ 4 K while simultaneously applying a voltage bias between a back gate and the two-dimensional electron gas. Control of the final carrier density is achieved by tuning the back gate bias during illumination. Furthermore, the strength of the persistent photoconductivity depends on the Al mole fraction in the back Al_{x}Ga_{1-x}As barrier, and is largest at $x \simeq 0.4$.
dc.descriptionSubmitted to Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/0302429
dc.identifierhttp://arxiv.org/abs/cond-mat/0302429
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/20918
dc.subjectMesoscale and Nanoscale Physics
dc.titleField-Effect Persistent Photoconductivity
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