Electron spin coherence in Si/SiGe quantum wells

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dc.creatorTruitt, J. L.
dc.creatorSlinker, K. A.
dc.creatorLewis, K. L. M.
dc.creatorSavage, D. E.
dc.creatorTahan, Charles
dc.creatorKlein, L. J.
dc.creatorJoynt, Robert
dc.creatorLagally, M. G.
dc.creatorvan der Weide, D. W.
dc.creatorCoppersmith, S. N.
dc.creatorEriksson, M. A.
dc.creatorTyryshkin, A. M.
dc.creatorChu, J. O.
dc.creatorMooney, P. M.
dc.date2004-11-29
dc.date.accessioned2026-07-07T03:02:24Z
dc.date.available2026-07-07T03:02:24Z
dc.descriptionThe mechanisms limiting the spin coherence time of electrons are of great importance for spintronics. We present electron spin resonance (ESR) and transport measurements of six different two dimensional electron gases in silicon/silicon-germanium (Si/SiGe 2DEGs). The spin decoherence time $T_2^*$ is presented in conjunction with the 2DEG density $n_e$ and momentum scattering time $τ_p$ as measured from transport experiments. A pronounced dependence of $T_2^*$ on the orientation of the applied magnetic field with respect to 2DEG layer is found which is not consistent with that expected from any mechanism described in the literature.
dc.description4 pages, 4 figures, 1 table
dc.identifierhttps://arxiv.org/abs/cond-mat/0411735
dc.identifierhttp://arxiv.org/abs/cond-mat/0411735
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25382
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.titleElectron spin coherence in Si/SiGe quantum wells
dc.typetext

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