Andreev scattering and conductance enhancement in mesoscopic semiconductor-superconductor junctions

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dc.creatorMortensen, Niels Asger
dc.creatorJauho, Antti-Pekka
dc.creatorFlensberg, Karsten
dc.date1999-11-23
dc.date.accessioned2026-07-07T03:15:16Z
dc.date.available2026-07-07T03:15:16Z
dc.descriptionAn inherent difficulty in studying mesoscopic effects in semiconductor--superconductor hybrid structures is the large Schottky barrier which often forms at the interface. A large technological effort has been invested in in improving the contact between the superconductor and the two-dimensional electron gas (2DEG) of a semiconductor heterostructure, and in recent years this has become possible for e.g. GaAs-Al, GaAs-In, and InAs-Nb junctions. This development motivates quantitative theoretical modeling of sample-specific transport properties. The aim of our work is to model the conducting properties of a ballistic 2DEG-S interfaces with a QPC in the normal region and also to take into account scattering due to a weak Schottky barrier and/or non-matching Fermi properties of the semiconductor and superconductor.
dc.description2 pages including 3 figures. Extended abstract for "Electron Transport in Mesoscopic Systems", 12-15 August 1999, Gotenburg, Sweden (LT22 satelite)
dc.identifierhttps://arxiv.org/abs/cond-mat/9911372
dc.identifierhttp://arxiv.org/abs/cond-mat/9911372
dc.identifierExtended abstracts of Electron Transport in Mesoscopic Systems, pp. 120-121 (1999)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/29964
dc.subjectMesoscale and Nanoscale Physics
dc.subjectSuperconductivity
dc.titleAndreev scattering and conductance enhancement in mesoscopic semiconductor-superconductor junctions
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