Optical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a InGaAs/AlAs resonant tunnelling diode

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dc.creatorFigueiredo, J. M. L.
dc.creatorBoyd, A. R.
dc.creatorStanley, C. R.
dc.creatorIronside, C. N.
dc.creatorMcMeekin, S. G.
dc.creatorLeite, A. M. P.
dc.date2005-03-17
dc.date2005-03-17
dc.date.accessioned2026-07-07T05:54:26Z
dc.date.available2026-07-07T05:54:26Z
dc.descriptionWe report electro-absorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing a InGaAs/AlAs double-barrier resonant tunneling diode (DB-RTD). The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band-edge to longer wavelengths via the Franz-Keldysh effect, thus changing the light-guiding characteristics of the waveguide. Low-frequency characterisation of a device shows modulation up to 28 dB at 1565 nm. When dc biased close to the negative differential conductance (NDC) region, the RTD optical waveguide behaves as an electro-absorption modulator integrated with a wide bandwidth electrical amplifier, offering a potential advantage over conventional pn modulators.
dc.description11 pages
dc.identifierhttps://arxiv.org/abs/physics/0503152
dc.identifierhttp://arxiv.org/abs/physics/0503152
dc.identifierAppl. Phys.Letts, 75, 22, pp. 3443-3445 (Nov. 1999)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/86961
dc.subjectOptics
dc.titleOptical modulation at around 1550 nm in a InGaAlAs optical waveguide containing a InGaAs/AlAs resonant tunnelling diode
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