Hole Transport in Impurity Band and Valence Bands Studied in Moderately Doped GaAs:Mn Single Crystals

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dc.creatorSlupinski, T.
dc.creatorCaban, J.
dc.creatorMoskalik, K.
dc.date2007-07-06
dc.date.accessioned2026-07-07T08:14:19Z
dc.date.available2026-07-07T08:14:19Z
dc.descriptionWe report on simple experiment on temperature-dependent Hall effect measurements in GaMnAs single crystalline samples with Mn composition estimated at 0.05-0.3 at.% which is slightly below the onset of ferromagnetism. Impurity band transport is visible for Mn compositions of ~0.3 at.% as a clear metallic behaviour. The results show interesting situation that the Metal-Insulator transition in GaAs:Mn occurs within the impurity band which is separated from the valence bands for Mn concentrations studied here. We also discuss on the equilibrium high temperature solubility limit of Mn in GaAs, unknown precisely in the literature.
dc.description9 pages, 2 figures, Proc. of 35th International School on the Physics of Semiconducting Compounds, Jaszowiec 2007, Poland, to appear in Acta Physica Polonica A (2007)
dc.identifierhttps://arxiv.org/abs/0707.0968
dc.identifierhttp://arxiv.org/abs/0707.0968
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/133079
dc.subjectMaterials Science
dc.titleHole Transport in Impurity Band and Valence Bands Studied in Moderately Doped GaAs:Mn Single Crystals
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