CVD of CrO2: towards a lower temperature deposition process

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dc.creatorSousa, P. M.
dc.creatorDias, S. A.
dc.creatorSilvestre, A. J.
dc.creatorConde, O.
dc.creatorMorris, B.
dc.creatorYates, K. A.
dc.creatorBranford, W. R.
dc.creatorCohen, L. F.
dc.date2007-01-26
dc.date.accessioned2026-07-07T07:43:12Z
dc.date.available2026-07-07T07:43:12Z
dc.descriptionWe report on the synthesis of highly oriented a-axis CrO2 films onto (0001) sapphire by atmospheric pressure CVD from CrO3 precursor, at growth temperatures down to 330 degree Celsius, i.e. close to 70 degrees lower than in published data for the same chemical system. The films keep the high quality magnetic behaviour as those deposited at higher temperature, which can be looked as a promising result in view of their use with thermally sensitive materials, e.g. narrow band gap semiconductors.
dc.description13 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0701671
dc.identifierhttp://arxiv.org/abs/cond-mat/0701671
dc.identifierChemical Vapor Deposition 12 (2006) 712
dc.identifierdoi:10.1002/cvde.200604233
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/122733
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleCVD of CrO2: towards a lower temperature deposition process
dc.typetext

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