Antisite effect on ferromagnetism in (Ga,Mn)As

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dc.creatorMyers, R. C.
dc.creatorSheu, B. L.
dc.creatorJackson, A. W.
dc.creatorGossard, A. C.
dc.creatorSchiffer, P.
dc.creatorSamarth, N.
dc.creatorAwschalom, D. D.
dc.date2006-06-19
dc.date.accessioned2026-07-07T07:12:45Z
dc.date.available2026-07-07T07:12:45Z
dc.descriptionWe study the Curie temperature and hole density of (Ga,Mn)As while systematically varying the As-antisite density. Hole compensation by As-antisites limits the Curie temperature and can completely quench long-range ferromagnetic order in the low doping regime of 1-2% Mn. Samples are grown by molecular beam epitaxy without substrate rotation in order to smoothly vary the As to Ga flux ratio across a single wafer. This technique allows for a systematic study of the effect of As stoichiometry on the structural, electronic, and magnetic properties of (Ga,Mn)As. For concentrations less than 1.5% Mn, a strong deviation from Tc ~ p^0.33 is observed. Our results emphasize that proper control of As-antisite compensation is critical for controlling the Curie temperatures in (Ga,Mn)As at the low doping limit.
dc.description10 pages, 7 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0606488
dc.identifierhttp://arxiv.org/abs/cond-mat/0606488
dc.identifierPhys. Rev. B 74, 155203 (2006)
dc.identifierdoi:10.1103/PhysRevB.74.155203
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/112182
dc.subjectMaterials Science
dc.titleAntisite effect on ferromagnetism in (Ga,Mn)As
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