Graphene on metal surface: gap opening and n-doping
| dc.creator | Lu, Y. H. | |
| dc.creator | He, P. M. | |
| dc.creator | Feng, Y. P. | |
| dc.date | 2007-12-25 | |
| dc.date.accessioned | 2026-07-07T08:51:16Z | |
| dc.date.available | 2026-07-07T08:51:16Z | |
| dc.description | Graphene grown on metal surface, Cu(111), with a boron nitride(BN) buffer layer is studied for the first time. Our first-principles calculations reveal that charge is transferred from the copper substrate to graphene through the BN buffer layer which results in a n-doped graphene in the absence of a gate voltage. More importantly, a gap of 0.2 eV which is comparable to that of a typical narrow gap semicondutor opens just 0.5 eV below the Fermi-level at the Dirac point. The Fermi-level can be easily shifted inside this gap to make graphene a semiconductor which is crucial for graphene-based electronic devices. A graphene based p-n junction can be realized with graphene eptaxially grown on metal surface. | |
| dc.description | 4 pages, 3 figures | |
| dc.identifier | https://arxiv.org/abs/0712.4008 | |
| dc.identifier | http://arxiv.org/abs/0712.4008 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/144876 | |
| dc.subject | Materials Science | |
| dc.title | Graphene on metal surface: gap opening and n-doping | |
| dc.type | text |