Modeling electromechanical properties of layered electrets: Application of the finite-element method
| dc.creator | Tuncer, Enis | |
| dc.creator | Wegener, Michael | |
| dc.creator | Gerhard-Multhaupt, Reimund | |
| dc.date | 2004-06-18 | |
| dc.date.accessioned | 2026-07-07T02:58:42Z | |
| dc.date.available | 2026-07-07T02:58:42Z | |
| dc.description | We present calculations on the deformation of two- and three-layer electret systems. The electrical field is coupled with the stress-strain equations by means of the Maxwell stress tensor. In the simulations, two-phase systems are considered, and intrinsic relative dielectric permittivity and Young's modulus of the phases are altered. The numerically calculated electro-mechanical activity is compared to an analytical expression. Simulations are performed on two- and three-layer systems. Various parameters in the model are systematically varied and their influence on the resulting piezoelectricity is estimated. In three-layer systems with bipolar charge, the piezoelectric coefficients exhibit a strong dependence on the elastic moduli of the phases. However, with mono-polar charge, there is no significant piezoelectric effect. A two-dimensional simulation illustrated that higher piezoelectricity coefficients can be obtained for non-uniform surface charges and low Poisson's ratio of phases. Irregular structures considered exhibit low piezoelectric activity compared to two-layer structures. | |
| dc.description | To be appaer in J Electrostatics | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0406429 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0406429 | |
| dc.identifier | Journal of Electrostatics, Vol. 63, Issue 1, January 2005, Pages 21-35 | |
| dc.identifier | doi:10.1016/j.elstat.2004.06.002 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/24210 | |
| dc.subject | Materials Science | |
| dc.title | Modeling electromechanical properties of layered electrets: Application of the finite-element method | |
| dc.type | text |