High-Resolution X-Ray Reflectivity Study of Thin Layered Pt-Electrodes for Integrated Ferroelectric Devices

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dc.creatorAspelmeyer, M.
dc.creatorKlemradt, U.
dc.creatorHartner, W.
dc.creatorBachhofer, H.
dc.creatorSchindler, G.
dc.date2000-10-28
dc.date.accessioned2026-07-07T02:39:10Z
dc.date.available2026-07-07T02:39:10Z
dc.descriptionThe structural interface properties of layered Pt/Ti/SiO2/Si electrodes have been investigated using high-resolution specular and diffuse x-ray reflectivity under grazing angles. Currently this multilayer system represents a technological standard as bottom electrodes for ferroelectric thin film applications. For the electronic and ferroelectric properties of integrated devices, the film-electrode interface is of crucial importance. We focused on Pt-100nm/Ti-10nm/SiO2/Si electrodes prepared under annealing conditions as employed in industrial processing, prior to the deposition of ferroelectric films. The comparison between annealed and non-annealed electrodes clearly revealed strong interfacial effects due to interdiffusion and oxidation of Ti, especially at the Pt-Ti interface. Migration of Ti into the Pt-layer results in a clear shift of the critical angle due to enclosure of TiO(2-x) within the Pt-layer. The heterogeneous distribution of TiO(2-x) suggests a diffusion mechanism mainly along the Pt-grain boundaries. At the SiO2 interface a relatively weakly oxidized, remaining Ti-layer of 20 Angstroem could be found, which is most probably correlated with the remaining adhesion to the substrate.
dc.descriptionpresented at the X-TOP Conference on High-Resolution X-ray Diffraction and Topography (Sept.13-15 2000), submitted to Journal of Physics D: Applied Physics
dc.identifierhttps://arxiv.org/abs/cond-mat/0010467
dc.identifierhttp://arxiv.org/abs/cond-mat/0010467
dc.identifierJ.Phys.D: Appl.Phys.34 (2001) A173-A178
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16950
dc.subjectMaterials Science
dc.titleHigh-Resolution X-Ray Reflectivity Study of Thin Layered Pt-Electrodes for Integrated Ferroelectric Devices
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