Theory of Spin Hall conductivity in n-doped GaAs

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dc.creatorEngel, Hans-Andreas
dc.creatorHalperin, Bertrand I.
dc.creatorRashba, Emmanuel I.
dc.date2005-05-21
dc.date.accessioned2026-07-07T06:21:34Z
dc.date.available2026-07-07T06:21:34Z
dc.descriptionWe develop a theory of extrinsic spin currents in semiconductors, resulting from spin-orbit coupling at charged scatterers, which leads to skew scattering and side jump contributions to the spin Hall conductance. Applying the theory to bulk n-GaAs, without any free parameters, we find spin currents that are in reasonable agreement with recent experiments by Kato et al. [Science 306, 1910 (2004)].
dc.description5 pages, 1 figure
dc.identifierhttps://arxiv.org/abs/cond-mat/0505535
dc.identifierhttp://arxiv.org/abs/cond-mat/0505535
dc.identifierPhys. Rev. Lett. 95, 166605 (2005)
dc.identifierdoi:10.1103/PhysRevLett.95.166605
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/95640
dc.subjectMesoscale and Nanoscale Physics
dc.titleTheory of Spin Hall conductivity in n-doped GaAs
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