Metal to insulator transition in epitaxial graphene induced by molecular doping

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dc.creatorZhou, S. Y.
dc.creatorSiegel, D. A.
dc.creatorFedorov, A. V.
dc.creatorLanzara, A.
dc.date2008-07-30
dc.date2008-10-22
dc.date.accessioned2026-07-07T10:11:57Z
dc.date.available2026-07-07T10:11:57Z
dc.descriptionThe capability to control the type and amount of charge carriers in a material and, in the extreme case, the transition from metal to insulator is one of the key challenges of modern electronics. By employing angle resolved photoemission spectroscopy (ARPES) we find that a reversible metal to insulator transition and a fine tuning of the charge carriers from electrons to holes can be achieved in epitaxial bilayer and single layer graphene by molecular doping. The effects of electron screening and disorder are also discussed. These results demonstrate that epitaxial graphene is suitable for electronics applications, as well as provide new opportunities for studying the hole doping regime of the Dirac cone in graphene.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0807.4791
dc.identifierhttp://arxiv.org/abs/0807.4791
dc.identifierPhys. Rev. Lett. 101, 086402 (2008)
dc.identifierdoi:10.1103/PhysRevLett.101.086402
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/172025
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleMetal to insulator transition in epitaxial graphene induced by molecular doping
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