Comment on ``Topological Oscillations of the Magnetoconductance in Disordered GaAs Layers''

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dc.creatorPruisken, A. M. M.
dc.creatorBurmistrov, I. S.
dc.date2005-04-28
dc.date.accessioned2026-07-07T06:21:59Z
dc.date.available2026-07-07T06:21:59Z
dc.descriptionIn a recent Letter, Murzin et. al. [Phys. Rev. Lett., vol. 92, 016802 (2004)] investigated "instanton effects" in the magneto resistance data taken from samples with heavily Si-doped GaAs layers at low temperatures. This topological issue originally arose in the development of a microscopic theory of quantum Hall effect some 20 years ago. The investigations by Murzin et. al., however, do not convey the correct ideas on scaling that have emerged over the years in the general theory of quantum transport.
dc.descriptioncomment on Phys. Rev. Lett., vol. 92, 016802 (2004)
dc.identifierhttps://arxiv.org/abs/cond-mat/0504763
dc.identifierhttp://arxiv.org/abs/cond-mat/0504763
dc.identifierPhys. Rev. Lett. 95, 189701 (2005)
dc.identifierdoi:10.1103/PhysRevLett.95.189701
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/95779
dc.subjectMesoscale and Nanoscale Physics
dc.titleComment on ``Topological Oscillations of the Magnetoconductance in Disordered GaAs Layers''
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