Kinetic Monte Carlo simulation of the nitridation of the GaAs (100) surfaces
| dc.creator | Castro, A. P. | |
| dc.creator | Alves, H. W. Leite | |
| dc.date | 2006-03-05 | |
| dc.date.accessioned | 2026-07-07T07:02:08Z | |
| dc.date.available | 2026-07-07T07:02:08Z | |
| dc.description | We present, in this work, our preliminary results of a systematic theoretical study of the adsorption of N over As-terminated GaAs (100) (2$\times$1) surfaces. We analyzed the changes in the bond-lenghts, bond-angles and the energetics involved before and after deposition. Our results show that the N-atoms will prefer the unoccupied sites of the surface, close to the As dimer. The presence of the N pushes the As dimer out of the surface, leading to the anion exchange between the N and As atoms. Based on our results, we discussed about the kinetics of the N islands formation during epitaxial growth of the III-Nitrides. | |
| dc.description | 4 pages, 7 figures, accepted for publication in Braz. J. Phys., special number, Proceedings of BWSP-12, 12th Brazilian Workshop on Semiconductor Physics | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0603111 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0603111 | |
| dc.identifier | Braz. J. Phys. 36(2a), 305-308(2006) | |
| dc.identifier | doi:10.1590/S0103-97332006000300019 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/108501 | |
| dc.subject | Other Condensed Matter | |
| dc.title | Kinetic Monte Carlo simulation of the nitridation of the GaAs (100) surfaces | |
| dc.type | text |