Hole doping MgB$_2$ without chemical substitution

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dc.creatorZhang, Peihong
dc.creatorSaito, Susumu
dc.creatorLouie, Steven G.
dc.creatorCohen, Marvin L.
dc.date2007-02-27
dc.date.accessioned2026-07-07T07:49:00Z
dc.date.available2026-07-07T07:49:00Z
dc.descriptionStructures for realizing hole-doped MgB$_2$ without appealing to chemical substitutions are proposed. These structures which consist of alternating MgB$_2$ and graphene layers have small excess energy compared to bulk graphite and MgB$_2$. Density functional theory based first-principles electronic structure calculations show significant charge transfer from the MgB$_2$ layer to graphene, resulting in effectively hole-doped MgB$_2$. Substantial enhancement in the density of states at the Fermi level of the proposed structure is predicted.
dc.identifierhttps://arxiv.org/abs/cond-mat/0702625
dc.identifierhttp://arxiv.org/abs/cond-mat/0702625
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/124699
dc.subjectSuperconductivity
dc.subjectMaterials Science
dc.titleHole doping MgB$_2$ without chemical substitution
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