Spin-dependent tunneling in the nearly-free-electron model

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dc.creatorBose, Peter
dc.creatorHenk, Juergen
dc.creatorMertig, Ingrid
dc.date2006-03-08
dc.date.accessioned2026-07-07T07:02:15Z
dc.date.available2026-07-07T07:02:15Z
dc.descriptionSpin-dependent ballistic transport through a tunnel barrier is treated within the one-dimensional nearly-free-electron model. The comparison with free electrons reveals significant effects of band gaps, in particular in the bias dependence. The results are qualitatively explained by the number of incident and transmitted states in the leads. With an extension to ferromagnetic leads the bias dependence of tunnel magneto-resistance is discussed.
dc.identifierhttps://arxiv.org/abs/cond-mat/0603207
dc.identifierhttp://arxiv.org/abs/cond-mat/0603207
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/108536
dc.subjectMesoscale and Nanoscale Physics
dc.titleSpin-dependent tunneling in the nearly-free-electron model
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