Hidden Charge 2e Boson in Doped Mott Insulators: Field Theory of Mottness

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dc.creatorLeigh, Robert G.
dc.creatorPhillips, Philip
dc.creatorChoy, Ting-Pong
dc.date2006-12-05
dc.date2007-07-12
dc.date.accessioned2026-07-07T11:01:21Z
dc.date.available2026-07-07T11:01:21Z
dc.descriptionWe construct the low energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a charge 2e bosonic field emerges at low energy. The charge 2e boson mediates dynamical spectral weight transfer across the Mott gap and creates a new charge e excitation by binding a hole. The result is a bifurcation of the electron dispersion below the chemical potential as observed recently in angle-resolved photoemission on Pb-doped Bi_2Sr_2CaCu_2O_{8+δ} (Pb2212).
dc.description4 pages, 2 figures: Correct version to appear in PRL. Revisions include a derivation of the electron operator at low energies which reveals a branching structure seen recently in ARPES on Pb2212
dc.identifierhttps://arxiv.org/abs/cond-mat/0612130
dc.identifierhttp://arxiv.org/abs/cond-mat/0612130
dc.identifierPhys.Rev.Lett.99:046404,2007
dc.identifierdoi:10.1103/PhysRevLett.99.046404
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/187926
dc.subjectStrongly Correlated Electrons
dc.subjectHigh Energy Physics - Theory
dc.titleHidden Charge 2e Boson in Doped Mott Insulators: Field Theory of Mottness
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