Zero-bias anomaly in disordered wires

dc.creatorMishchenko, E. G.
dc.creatorAndreev, A. V.
dc.creatorGlazman, L. I.
dc.date2001-06-21
dc.date2001-11-17
dc.date.accessioned2026-07-07T02:41:52Z
dc.date.available2026-07-07T02:41:52Z
dc.descriptionWe calculate the low-energy tunneling density of states $ν(ε, T)$ of an $N$-channel disordered wire, taking into account the electron-electron interaction non-perturbatively. The finite scattering rate $1/τ$ results in a crossover from the Luttinger liquid behavior at higher energies, $ν\proptoε^α$, to the exponential dependence $ν(ε, T=0)\propto \exp{(-ε^*/ε)}$ at low energies, where $ε^*\propto 1/(N τ)$. At finite temperature $T$, the tunneling density of states depends on the energy through the dimensionless variable $ε/\sqrt{ε^* T}$. At the Fermi level $ν(ε=0,T) \propto \exp (-\sqrt{ε^*/T})$.
dc.description5 pages, 1 figure
dc.identifierhttps://arxiv.org/abs/cond-mat/0106448
dc.identifierhttp://arxiv.org/abs/cond-mat/0106448
dc.identifierPhys. Rev. Lett. 87, 246801 (2001).
dc.identifierdoi:10.1103/PhysRevLett.87.246801
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/17914
dc.subjectMesoscale and Nanoscale Physics
dc.titleZero-bias anomaly in disordered wires
dc.typetext

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