Electronic Excitations and Insulator-Metal Transition in Poly(3-hexylthiophene) Organic Field-Effect Transistors

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dc.creatorSai, N.
dc.creatorLi, Z. Q.
dc.creatorMartin, M. C.
dc.creatorBasov, D. N.
dc.creatorDi Ventra, M.
dc.date2006-11-10
dc.date.accessioned2026-07-07T07:38:30Z
dc.date.available2026-07-07T07:38:30Z
dc.descriptionWe carry out a comprehensive theoretical and experimental study of charge injection in Poly(3-hexylthiophene) (P3HT) to determine the most likely scenario for metal-insulator transition in this system. We calculate the optical absorption frequencies corresponding to a polaron and a bipolaron lattice in P3HT. We also analyze the electronic excitations for three possible scenarios under which a first-- or a second--order metal--insulator transition can occur in doped P3HT. These theoretical scenarios are compared with data from infrared absorption spectroscopy on P3HT thin film field-effect transistors (FET). Our measurements and theoretical predictions suggest that charge-induced localized states in P3HT FETs are bipolarons and that the highest doping level achieved in our experiments approaches that required for a first-order metal--insulator transition.
dc.description9 pages, 4 figures. Phys. Rev. B, in press
dc.identifierhttps://arxiv.org/abs/cond-mat/0611268
dc.identifierhttp://arxiv.org/abs/cond-mat/0611268
dc.identifierPhys. Rev. B 75, 045307 (2007)
dc.identifierdoi:10.1103/PhysRevB.75.045307
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/121105
dc.subjectMaterials Science
dc.subjectSoft Condensed Matter
dc.titleElectronic Excitations and Insulator-Metal Transition in Poly(3-hexylthiophene) Organic Field-Effect Transistors
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