Growth and optical properties of self-assembled InGaAs Quantum Posts

Simple item page
dc.creatorKrenner, H. J.
dc.creatorPryor, C.
dc.creatorHe, J.
dc.creatorZhang, J. P.
dc.creatorWu, Y.
dc.creatorMorris, C. M.
dc.creatorSherwin, M. S.
dc.creatorPetroff, P. M.
dc.date2007-09-14
dc.date2008-01-19
dc.date.accessioned2026-07-07T09:31:39Z
dc.date.available2026-07-07T09:31:39Z
dc.descriptionWe demonstrate a method to grow height controlled, dislocation-free InGaAs quantum posts (QPs) on GaAs by molecular beam epitaxy (MBE) which is confirmed by structural investigations. The optical properties are compared to realistic 8-band k.p calculations of the electronic structure which fully account for strain and the structural properties of the QP. Using QPs embedded in n-i-p junctions we find wide range tunability of the interband spectrum and giant static dipole moments.
dc.descriptionProccedings paper for MSS-13, 7 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/0709.2392
dc.identifierhttp://arxiv.org/abs/0709.2392
dc.identifierPhysica E 40, 1785-1789 (2008)
dc.identifierdoi:10.1016/j.physe.2007.09.165
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/158534
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.subjectQuantum Physics
dc.titleGrowth and optical properties of self-assembled InGaAs Quantum Posts
dc.typetext

Files

Collections

arXiv