Theory of domain structure in ferromagnetic phase of diluted magnetic semiconductors near the phase transition temperature
| dc.creator | Stephanovich, V. A. | |
| dc.date | 2006-03-24 | |
| dc.date.accessioned | 2026-07-07T07:04:57Z | |
| dc.date.available | 2026-07-07T07:04:57Z | |
| dc.description | We discuss the influence of disorder on domain structure formation in ferromagnetic phase of diluted magnetic semiconductors (DMS) of p-type. Using analytical arguments we show the existence of critical ratio $ν_{\rm {cr}}$ of concentration of charge carriers and magnetic ions such that sample critical thickness $L_{\rm{cr}}$ (such that at $L<L_{\rm{cr}}$ a sample is monodomain) diverges as $ν\to ν_{\rm {cr}}$. At $ν> ν_{\rm {cr}}$ the sample is monodomain. This feature makes DMS different from conventional ordered magnets as it gives a possibility to control the sample critical thickness and emerging domain structure period by variation of $ν$. As concentration of magnetic impurities grows, $ν_{\rm {cr}}\to \infty$ restoring conventional behavior of ordered magnets. Above facts have been revealed by examination of the temperature of transition to inhomogeneous magnetic state (stripe domain structure) in a slab of finite thickness $L$ of p-type DMS. Our analysis is carried out on the base of homogeneous exchange part of magnetic free energy of DMS calculated by us earlier [\prb, {\bf 67}, 195203 (2003)]. | |
| dc.description | 4 pages, 4 figures | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0603676 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0603676 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/109512 | |
| dc.subject | Materials Science | |
| dc.title | Theory of domain structure in ferromagnetic phase of diluted magnetic semiconductors near the phase transition temperature | |
| dc.type | text |