Reorientation Transition in Single-Domain (Ga,Mn)As

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dc.creatorWang, K-Y.
dc.creatorSawicki, M.
dc.creatorEdmonds, K. W.
dc.creatorCampion, R. P.
dc.creatorMaat, S.
dc.creatorFoxon, C. T.
dc.creatorGallagher, B. L.
dc.creatorDietl, T.
dc.date2005-07-07
dc.date.accessioned2026-07-07T06:25:52Z
dc.date.available2026-07-07T06:25:52Z
dc.descriptionWe demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in (Ga,Mn)As results in a magnetization reorientation transition and an anisotropic AC susceptibility which is fully consistent with a simple single domain model. The uniaxial and biaxial anisotropy constants vary respectively as the square and fourth power of the spontaneous magnetization across the whole temperature range up to T_C. The weakening of the anisotropy at the transition may be of technological importance for applications involving thermally-assisted magnetization switching.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0507187
dc.identifierhttp://arxiv.org/abs/cond-mat/0507187
dc.identifierPhys. Rev Lett. 95, 217204 (2005)
dc.identifierdoi:10.1103/PhysRevLett.95.217204
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/96949
dc.subjectMaterials Science
dc.titleReorientation Transition in Single-Domain (Ga,Mn)As
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