Time-dependent Effects in the Metallic Phase in Si-MOS: Evidence for Non-Diffusive Transport

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dc.creatorPudalov, V. M.
dc.creatorBrunthaler, G.
dc.creatorPrinz, A.
dc.creatorBauer, G.
dc.creatorFouks, B. I.
dc.date1999-07-26
dc.date.accessioned2026-07-07T03:14:01Z
dc.date.available2026-07-07T03:14:01Z
dc.descriptionWe have found that the conduction in Si-MOS structures has a substantial imaginary component in the metallic phase for the density range 6 \times n_c > n > n_c, where n_c is the critical density of the metal-insulator transition. For high mobility samples, the corresponding delay (or advance) time equals approximately to 0.1 - 10ms and increases exponentially as density and temperature decrease. In very low mobility samples, at temperature of 0.3K, the time-lag in establishing the equilibrium resistance reaches hundreds of seconds. The delay (advance) times are approximately 10^2-10^8 times larger than the overall RC-time of the gated structure. These results give evidence for a non-Boltzmann character of the transport in the low-density metallic phase. We relate the time-dependent effects to tunneling of carries between the 2D bulk and localized states.
dc.description4 pages, RevTeX, 3 ps-figures
dc.identifierhttps://arxiv.org/abs/cond-mat/9907401
dc.identifierhttp://arxiv.org/abs/cond-mat/9907401
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/29523
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleTime-dependent Effects in the Metallic Phase in Si-MOS: Evidence for Non-Diffusive Transport
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