Optoelectronic control of spin dynamics at near-THz frequencies in magnetically doped quantum wells

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dc.creatorMyers, R. C.
dc.creatorKu, K. C.
dc.creatorLi, X.
dc.creatorSamarth, N.
dc.creatorAwschalom, D. D.
dc.date2004-11-18
dc.date.accessioned2026-07-07T03:02:13Z
dc.date.available2026-07-07T03:02:13Z
dc.descriptionWe use time-resolved Kerr rotation to demonstrate the optical and electronic tuning of both the electronic and local moment (Mn) spin dynamics in electrically gated parabolic quantum wells derived from II-VI diluted magnetic semiconductors. By changing either the electrical bias or the laser energy, the electron spin precession frequency is varied from 0.1 to 0.8 THz at a magnetic field of 3 T and at a temperature of 5 K. The corresponding range of the electrically-tuned effective electron g-factor is an order of magnitude larger compared with similar nonmagnetic III-V parabolic quantum wells. Additionally, we demonstrate that such structures allow electrical modulation of local moment dynamics in the solid state, which is manifested as changes in the amplitude and lifetime of the Mn spin precession signal under electrical bias. The large variation of electron and Mn-ion spin dynamics is explained by changes in magnitude of the sp−d exchange overlap.
dc.description4 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0411492
dc.identifierhttp://arxiv.org/abs/cond-mat/0411492
dc.identifierPhys. Rev. B 72, 041302(R) (2005)
dc.identifierdoi:10.1103/PhysRevB.72.041302
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25315
dc.subjectMesoscale and Nanoscale Physics
dc.subjectMaterials Science
dc.titleOptoelectronic control of spin dynamics at near-THz frequencies in magnetically doped quantum wells
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