Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes

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dc.creatorShibata, K.
dc.creatorBuizert, C.
dc.creatorOiwa, A.
dc.creatorHirakawa, K.
dc.creatorTarucha, S.
dc.date2007-11-13
dc.date.accessioned2026-07-07T08:42:37Z
dc.date.available2026-07-07T08:42:37Z
dc.descriptionWe have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40 mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage $|V_{\rm SD}| < 2Δ/e$, where $Δ$ is the SC energy gap of Al. The absence of Josephson current that flows through QDs is due to the strong Coulomb interaction and non-negligible thermal fluctuation in our measurement system.
dc.identifierhttps://arxiv.org/abs/0711.1945
dc.identifierhttp://arxiv.org/abs/0711.1945
dc.identifierAPPLIED PHYSICS LETTERS 91, 112102 (2007)
dc.identifierdoi:10.1063/1.2779970
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/142023
dc.subjectMesoscale and Nanoscale Physics
dc.subjectSuperconductivity
dc.titleLateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes
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