Possible persistence of the metal-insulator transition in two-dimensional systems at finite temperatures
| dc.creator | Mobius, A. | |
| dc.date | 2002-09-27 | |
| dc.date.accessioned | 2026-07-07T02:47:29Z | |
| dc.date.available | 2026-07-07T02:47:29Z | |
| dc.description | For the immediate vicinity of the metal-insulator transition (MIT), data on the dependence of the resistivity rho on the charge carrier concentration n from an Si MOSFET experiment by Kravchenko et al. and from an AlAs quantum well study by Papadakis and Shayegan are reanalyzed. In both cases, the rho(T=const.,n) curves for various values of the temperature T seem to exhibit an offset concerning n, where the related resistivity is close to h/e^2. This offset may result from a peculiarity in rho(T=const.,n) indicating the MIT to be present also at finite T. More detailed experiments are imperative. | |
| dc.description | 3 pages including 3 figures, Revtex; submitted to Phys. Rev. B | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0209652 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0209652 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/20028 | |
| dc.subject | Disordered Systems and Neural Networks | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Possible persistence of the metal-insulator transition in two-dimensional systems at finite temperatures | |
| dc.type | text |