Magnetically induced spin-dependent photoemission from p-GaAs(Cs,O) into vacuum

Simple item page
dc.creatorOrlov, D. A.
dc.creatorAlperovich, V. L.
dc.creatorTerekhov, A. S.
dc.date2008-01-29
dc.date2008-05-24
dc.date.accessioned2026-07-07T09:40:29Z
dc.date.available2026-07-07T09:40:29Z
dc.descriptionA spin-dependent emission of optically oriented electrons from p-GaAs(Cs,O) into vacuum was experimentally observed in a magnetic field normal to the surface. This phenomenon is explained within the model which takes into account the jump in the electron g factor at the semiconductor-vacuum interface. Due to this jump, the effective electron affinity on the semiconductor surface depends on the mutual direction of optically oriented electron spins and the magnetic field, resulting in the spin-dependent photoemission. It is demonstrated that the observed effect can be used for the determination of spin diffusion length in semiconductors.
dc.description7 pages, 6 figures, published version
dc.identifierhttps://arxiv.org/abs/0801.4430
dc.identifierhttp://arxiv.org/abs/0801.4430
dc.identifierPhys. Rev. B 77, 205325 (2008)
dc.identifierdoi:10.1103/PhysRevB.77.205325
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/161503
dc.subjectMesoscale and Nanoscale Physics
dc.titleMagnetically induced spin-dependent photoemission from p-GaAs(Cs,O) into vacuum
dc.typetext

Files

Collections

arXiv