Independently switchable atomic quantum transistors by reversible contact reconstruction

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dc.creatorXie, F. -Q.
dc.creatorMaul, R.
dc.creatorAugenstein, A.
dc.creatorObermair, Ch.
dc.creatorStarikov, E. B.
dc.creatorSchoen, G.
dc.creatorSchimmel, Th.
dc.creatorWenzel, W.
dc.date2009-04-06
dc.date.accessioned2026-07-07T13:00:50Z
dc.date.available2026-07-07T13:00:50Z
dc.descriptionThe controlled fabrication of actively switchable atomic-scale devices, in particular transistors, has remained elusive to date. Here we explain operation of an atomic-scale three-terminal device by a novel switching mechanism of bistable, self-stabilizing reconstruction of the electrode contacts at the atomic level: While the device is manufactured by electrochemical deposition, it operates entirely on the basis of mechanical effects of the solid-liquid interface. We analyze mechanically and thermally stable metallic junctions with a predefined quantized conductance of 1-5 G_0 in experiment and atomistic simulation. Atomistic modeling of structural and conductance properties elucidates bistable electrode reconstruction as the underlying mechanism of the device. Independent room-temperature operation of two transistors at low voltage demonstrates intriguing perspectives for quantum electronics and logics on the atomic scale.
dc.identifierhttps://arxiv.org/abs/0904.0904
dc.identifierhttp://arxiv.org/abs/0904.0904
dc.identifierNano Lett. 8, 2393 (2008)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/225965
dc.subjectMesoscale and Nanoscale Physics
dc.titleIndependently switchable atomic quantum transistors by reversible contact reconstruction
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