Electron g-factor Engineering in III-V Semiconductors for Quantum Communications

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dc.creatorKosaka, Hideo
dc.creatorKiselev, Andrey A.
dc.creatorBaron, Filipp A.
dc.creatorKim, Ki Wook
dc.creatorYablonovitch, Eli
dc.date2001-02-09
dc.date2001-02-22
dc.date.accessioned2026-07-07T06:01:37Z
dc.date.available2026-07-07T06:01:37Z
dc.descriptionAn entanglement-preserving photo-detector converts photon polarization to electron spin. Up and down spin must respond equally to oppositely polarized photons, creating a requirement for degenerate spin energies, ge=0 for electrons. We present a plot of ge-factor versus lattice constant, analogous to bandgap versus lattice constant, that can be used for g-factor engineering of III-V alloys and quantum wells
dc.description2 pages, 1 figure, v2:caption style was corrected
dc.identifierhttps://arxiv.org/abs/quant-ph/0102056
dc.identifierhttp://arxiv.org/abs/quant-ph/0102056
dc.identifierElectronics Letters 37, 464 (2001)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/89323
dc.subjectQuantum Physics
dc.titleElectron g-factor Engineering in III-V Semiconductors for Quantum Communications
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