Observation of excited states in a p-type GaAs quantum dot

Simple item page
dc.creatorKomijani, Y.
dc.creatorCsontos, M.
dc.creatorIhn, T.
dc.creatorEnsslin, K.
dc.creatorReuter, D.
dc.creatorWieck, A. D.
dc.date2008-09-08
dc.date.accessioned2026-07-07T12:05:00Z
dc.date.available2026-07-07T12:05:00Z
dc.descriptionA quantum dot fabricated by scanning probe oxidation lithography on a p-type, C-doped GaAs/AlGaAs heterostructure is investigated by low temperature electrical conductance measurements. Clear Coulomb blockade oscillations are observed and analyzed in terms of sequential tunneling through the single-particle levels of the dot at T_hole = 185 mK. The charging energies as large as 2 meV evaluated from Coulomb diamond measurements together with the well resolved single-hole excited state lines in the charge stability diagram indicate that the dot is operated with a small number of confined particles close to the ultimate single-hole regime.
dc.description5 pages, 5 figures
dc.identifierhttps://arxiv.org/abs/0809.1362
dc.identifierhttp://arxiv.org/abs/0809.1362
dc.identifierEurophys. Lett. 84, 57004 (2008)
dc.identifierdoi:10.1209/0295-5075/84/57004
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/208268
dc.subjectMesoscale and Nanoscale Physics
dc.titleObservation of excited states in a p-type GaAs quantum dot
dc.typetext

Files

Collections

arXiv