Electric field driven donor-based charge qubits in semiconductors

Simple item page
dc.creatorKoiller, Belita
dc.creatorHu, Xuedong
dc.creatorSarma, S. Das
dc.date2005-10-19
dc.date.accessioned2026-07-07T06:44:35Z
dc.date.available2026-07-07T06:44:35Z
dc.descriptionWe investigate theoretically donor-based charge qubit operation driven by external electric fields. The basic physics of the problem is presented by considering a single electron bound to a shallow-donor pair in GaAs: This system is closely related to the homopolar molecular ion H_2^+. In the case of Si, heteropolar configurations such as PSb^+ pairs are also considered. For both homopolar and heteropolar pairs, the multivalley conduction band structure of Si leads to short-period oscillations of the tunnel-coupling strength as a function of the inter-donor relative position. However, for any fixed donor configuration, the response of the bound electron to a uniform electric field in Si is qualitatively very similar to the GaAs case, with no valley quantum interference-related effects, leading to the conclusion that electric field driven coherent manipulation of donor-based charge qubits is feasible in semiconductors.
dc.identifierhttps://arxiv.org/abs/cond-mat/0510520
dc.identifierhttp://arxiv.org/abs/cond-mat/0510520
dc.identifierPys. Rev. B 73, 045319 (2006)
dc.identifierdoi:10.1103/PhysRevB.73.045319
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/102823
dc.subjectMaterials Science
dc.subjectMesoscale and Nanoscale Physics
dc.subjectQuantum Physics
dc.titleElectric field driven donor-based charge qubits in semiconductors
dc.typetext

Files

Collections

arXiv