Density-functional theory study of half-metallic heterostructures: interstitial Mn in Si
| dc.creator | Wu, Hua | |
| dc.creator | Kratzer, Peter | |
| dc.creator | Scheffler, Matthias | |
| dc.date | 2007-02-08 | |
| dc.date.accessioned | 2026-07-07T07:51:16Z | |
| dc.date.available | 2026-07-07T07:51:16Z | |
| dc.description | Using density-functional theory within the generalized gradient approximation, we show that Si-based heterostructures with 1/4 layer $δ$-doping of {\em interstitial} Mn (Mn$_{\mathrm int}$) are half-metallic. For Mn$_{\mathrm int}$ concentrations of 1/2 or 1 layer, the states induced in the band gap of $δ$-doped heterostructures still display high spin polarization, about 85% and 60%, respectively. The proposed heterostructures are more stable than previously assumed $δ$-layers of {\em substitutional} Mn. Contrary to wide-spread belief, the present study demonstrates that {\em interstitial} Mn can be utilized to tune the magnetic properties of Si, and thus provides a new clue for Si-based spintronics materials. | |
| dc.description | 5 pages, 4 figures, PRL accepted | |
| dc.identifier | https://arxiv.org/abs/cond-mat/0702200 | |
| dc.identifier | http://arxiv.org/abs/cond-mat/0702200 | |
| dc.identifier | Phys. Rev. Lett. 98, 117202 (2007) | |
| dc.identifier | doi:10.1103/PhysRevLett.98.117202 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/125452 | |
| dc.subject | Materials Science | |
| dc.title | Density-functional theory study of half-metallic heterostructures: interstitial Mn in Si | |
| dc.type | text |