Graphene-on-Sapphire and Graphene-on-Glass: Raman Spectroscopy Study

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dc.creatorCalizo, I.
dc.creatorBao, W.
dc.creatorMiao, F.
dc.creatorLau, C. N.
dc.creatorBalandin, A. A.
dc.date2007-10-12
dc.date.accessioned2026-07-07T08:46:19Z
dc.date.available2026-07-07T08:46:19Z
dc.descriptionThe room-temperature Raman signatures from graphene layers on sapphire and glass substrates were compared with those from graphene on GaAs substrate and on the standard Si/SiO2 substrate, which served as a reference. It was found that while G peak of graphene on Si/SiO2 and GaAs is positioned at 1580 cm-1 it is down-shifted by ~5 cm-1 for graphene-on-sapphire (GOS) and, in many cases, splits into doublets for graphene-on-glass (GOG) with the central frequency around 1580 cm-1. The obtained results are important for graphene characterization and its proposed graphene applications in electronic devices.
dc.descriptionAccepted for publication in Applied Physics Letters, 9 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0710.2369
dc.identifierhttp://arxiv.org/abs/0710.2369
dc.identifierAppl. Phys. Lett. 91, 201904 (2007)
dc.identifierdoi:10.1063/1.2805024
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/143210
dc.subjectMaterials Science
dc.titleGraphene-on-Sapphire and Graphene-on-Glass: Raman Spectroscopy Study
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