Electronic transport driven spin-dynamics
| dc.creator | Siddiqui, L. | |
| dc.creator | Saha, D. | |
| dc.creator | Datta, S. | |
| dc.creator | Bhattacharya, P. | |
| dc.date | 2008-11-03 | |
| dc.date.accessioned | 2026-07-07T10:14:50Z | |
| dc.date.available | 2026-07-07T10:14:50Z | |
| dc.description | We propose a model to explore the dynamics of spin-systems coupled by exchange interaction to the conduction band electrons of a semiconductor material that forms the channel in a ferromagnet/semiconductor/ferromagnet spin-valve structure. We show that recent observation of the novel transient transport signature in a MnAs/GaAs/MnAs spin-valve structure with paramagnetic Mn impurities [D. Saha et al., Phys. Rev. Lett., 100, 196603 (2008)] can be quantitatively understood in terms of current driven dynamical polarization of Mn spins. Using our model of spin polarized transport through Schottky barriers at the two ferromagnet/semiconductor junctions in a spin-valve structure and a dynamical equation describing the paramagnetic impurities coupled to conduction band electrons we explain the scaling behaviour of observed transient features such as the magnitude and time-scale with temperature. | |
| dc.description | 7 pages, 6 figures | |
| dc.identifier | https://arxiv.org/abs/0811.0204 | |
| dc.identifier | http://arxiv.org/abs/0811.0204 | |
| dc.identifier.uri | http://salesiana.dossiersoluciones.com/handle/123456789/173022 | |
| dc.subject | Mesoscale and Nanoscale Physics | |
| dc.title | Electronic transport driven spin-dynamics | |
| dc.type | text |