Edge tunneling in fractional quantum Hall regime

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dc.creatorLee, Dung-Hai
dc.creatorWen, Xiao-Gang
dc.date1998-09-10
dc.date1998-09-11
dc.date.accessioned2026-07-07T03:11:31Z
dc.date.available2026-07-07T03:11:31Z
dc.descriptionWe address the issue of an apparent disagreement between theory and experiment on the I-V characteristic of electron tunneling from a metal to the edge of a two-dimensional electron gas in the fractional quantum Hall regime. A part of our result is a theory for the edge of the half-filled Landau level.
dc.descriptionReVTeX, 4 pages
dc.identifierhttps://arxiv.org/abs/cond-mat/9809160
dc.identifierhttp://arxiv.org/abs/cond-mat/9809160
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/28599
dc.subjectStrongly Correlated Electrons
dc.subjectMesoscale and Nanoscale Physics
dc.titleEdge tunneling in fractional quantum Hall regime
dc.typetext

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