Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor

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dc.creatorBurch, K. S.
dc.creatorShrekenhamer, D. B.
dc.creatorSingley, E. J.
dc.creatorStephens, J.
dc.creatorSheu, B. L.
dc.creatorKawakami, R. K.
dc.creatorSchiffer, P.
dc.creatorSamarth, N.
dc.creatorAwschalom, D. D.
dc.creatorBasov, D. N.
dc.date2006-03-31
dc.date2006-07-21
dc.date.accessioned2026-07-07T07:05:08Z
dc.date.available2026-07-07T07:05:08Z
dc.descriptionThe band structure of a prototypical dilute ferromagnetic semiconductor, Ga$_{1-x}$Mn$_{x}$As, is studied across the phase diagram via optical spectroscopy. We prove that the Fermi energy ($E_{F}$) resides in a Mn induced impurity band (IB). This conclusion is based upon careful analysis of the frequency and temperature dependence of the optical conductivity ($σ_{1}(ω,T)$). From our analysis of $σ_{1}(ω,T)$ we infer a large effective mass ($m^*$) of the carriers, supporting the view that conduction occurs in an IB. Our results also provide useful insights into the transport properties of Mn-doped GaAs.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0603851
dc.identifierhttp://arxiv.org/abs/cond-mat/0603851
dc.identifierPhys. Rev. Lett. 97, 087208 (2006)
dc.identifierdoi:10.1103/PhysRevLett.97.087208
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/109572
dc.subjectStrongly Correlated Electrons
dc.subjectMaterials Science
dc.titleImpurity Band Conduction in a High Temperature Ferromagnetic Semiconductor
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