Hole spin relaxation in semiconductor quantum dots

Simple item page
dc.creatorLü, C.
dc.creatorCheng, J. L.
dc.creatorWu, M. W.
dc.date2004-09-10
dc.date.accessioned2026-07-07T06:19:00Z
dc.date.available2026-07-07T06:19:00Z
dc.descriptionHole spin relaxation time due to the hole-acoustic phonon scattering in GaAs quantum dots confined in quantum wells along (001) and (111) directions is studied after the exact diagonalization of Luttinger Hamiltonian. Different effects such as strain, magnetic field, quantum dot diameter, quantum well width and the temperature on the spin relaxation time are investigated thoroughly. Many features which are quite different from the electron spin relaxation in quantum dots and quantum wells are presented with the underlying physics elaborated.
dc.description10 pages, 10 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0409249
dc.identifierhttp://arxiv.org/abs/cond-mat/0409249
dc.identifierPhys. Rev. B 71, 075308 (2005).
dc.identifierdoi:10.1103/PhysRevB.71.075308
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/94929
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.titleHole spin relaxation in semiconductor quantum dots
dc.typetext

Files

Collections

arXiv