Field Suppression of the Density-of-States: A Mechanism for Large Linear Magnetoresistance

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dc.creatorYoung, D. P.
dc.creatorDiTusa, J. F.
dc.creatorGoodrich, R. G.
dc.creatorHall, D.
dc.creatorAnderson, J.
dc.creatorGuo, S.
dc.creatorChan, Julia Y.
dc.creatorAdams, P. W.
dc.date2002-02-13
dc.date.accessioned2026-07-07T02:44:24Z
dc.date.available2026-07-07T02:44:24Z
dc.descriptionHall, resistivity, magnetization, and thermoelectric power measurements were performed on single crystals of the highly anisotropic layered metal LaSb2. A 100-fold linear magnetoresistance (MR) was observed in fields up to 45 T, with no indication of saturation. We show that the MR is associated with a magnetic-field-dependent holelike carrier density, n(H) \propto 1/H. The effect is orbital, depending upon the component of the magnetic field normal to the layers. At low temperature, a field of 9 T reduces the carrier density by more than an order of magnitude.
dc.description4 pages, 4 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0202220
dc.identifierhttp://arxiv.org/abs/cond-mat/0202220
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/18907
dc.subjectMaterials Science
dc.subjectStrongly Correlated Electrons
dc.titleField Suppression of the Density-of-States: A Mechanism for Large Linear Magnetoresistance
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