Hole states in wide band-gap diluted magnetic semiconductors and oxides

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dc.creatorDietl, Tomasz
dc.date2007-03-11
dc.date.accessioned2026-07-07T09:24:58Z
dc.date.available2026-07-07T09:24:58Z
dc.descriptionPuzzling disagreement between photoemission and optical findings in magnetically doped GaN and ZnO is explained within a generalized alloy theory. The obtained results show that the strong coupling between valence-band holes and localized spins gives rise to a mid-gap Zhang-Rice-like state, to a sign reversal of the apparent p-d exchange integral, and to an increase of the band-gap with the magnetic ion concentration.
dc.description5 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0703278
dc.identifierhttp://arxiv.org/abs/cond-mat/0703278
dc.identifierPhys. Rev. B 77 (2008) 085208.
dc.identifierdoi:10.1103/PhysRevB.77.085208
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/156258
dc.subjectOther Condensed Matter
dc.subjectDisordered Systems and Neural Networks
dc.subjectMaterials Science
dc.titleHole states in wide band-gap diluted magnetic semiconductors and oxides
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