Study of the band--gap shift in CdS films: Influence of thermal annealing in different atmospheres

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dc.creatorTomas, S. A.
dc.date1995-01-26
dc.date.accessioned2026-07-07T03:07:37Z
dc.date.available2026-07-07T03:07:37Z
dc.descriptionWe study by photoacoustic spectroscopy the band--gap shift effect of CdS films. The CdS films were grown by chemical bath deposition and exposed to different annealing atmospheres over a range of temperature in which the sample structure is observed to change. We show the band--gap evolution as a function of temperature of thermal annealing and determine the process which produces the best combination of high band--gap energy and low resistivity. It allows us to know a possible procedure to obtain low--resistivity CdS/CdTe solar cells with high--quantum efficiency.
dc.description17 pp, 4 Fig. (upon request), Latex
dc.identifierhttps://arxiv.org/abs/cond-mat/9501125
dc.identifierhttp://arxiv.org/abs/cond-mat/9501125
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/27237
dc.subjectCondensed Matter
dc.titleStudy of the band--gap shift in CdS films: Influence of thermal annealing in different atmospheres
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