Fabrication of MEMS Resonators in Thin SOI

dc.creatorGrogg, D.
dc.creatorBadila-Ciressan, Nicoleta Diana
dc.creatorIonescu, Adrian Mihai
dc.date2008-02-21
dc.date.accessioned2026-07-07T09:22:18Z
dc.date.available2026-07-07T09:22:18Z
dc.descriptionA simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important for advanced CMOS technology and thus are evaluated as resonator substrates for future co-integration with CMOS circuitry on a single chip. As the transduction capacitance scales with the resonator thickness, it is important to fabricate deep sub-micron trenches in order to achieve a good capacitive coupling. Through the combination of conventional UV-lithography and focused ion beam (FIB) milling the process needs only two lithography steps, enabling therefore a way for fast prototyping of MEM-resonators. Different FIB parameters and etching parameters are compared in this paper and their effect on the process are reported.
dc.descriptionSubmitted on behalf of EDA Publishing Association (http://irevues.inist.fr/EDA-Publishing)
dc.identifierhttps://arxiv.org/abs/0802.3040
dc.identifierhttp://arxiv.org/abs/0802.3040
dc.identifierDans Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS - DTIP 2007, Stresa, lago Maggiore : Italie (2007)
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/155328
dc.subjectOther Computer Science
dc.titleFabrication of MEMS Resonators in Thin SOI
dc.typetext

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