Epitaxial film growth and magnetic properties of Co_2FeSi

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dc.creatorSchneider, H.
dc.creatorJakob, G.
dc.creatorKallmayer, M.
dc.creatorElmers, H. J.
dc.creatorCinchetti, M.
dc.creatorBalke, B.
dc.creatorWurmehl, S.
dc.creatorFelser, C.
dc.creatorAeschlimann, M.
dc.creatorAdrian, H.
dc.date2006-06-26
dc.date2006-09-07
dc.date.accessioned2026-07-07T07:49:49Z
dc.date.available2026-07-07T07:49:49Z
dc.descriptionWe have grown thin films of the Heusler compound Co_2FeSi by RF magnetron sputtering. On (100)-oriented MgO substrates we find fully epitaxial (100)-oriented and L2_1 ordered growth. On Al_2O_3 (11-20) substrates, the film growth is (110)-oriented, and several in-plane epitaxial domains are observed. The temperature dependence of the electrical resistivity shows a power law with an exponent of 7/2 at low temperatures. Investigation of the bulk magnetic properties reveals an extrapolated saturation magnetization of 5.0 mu_B/fu at 0 K. The films on Al_2O_3 show an in-plane uniaxial anisotropy, while the epitaxial films are magnetically isotropic in the plane. Measurements of the X-ray magnetic circular dichroism of the films allowed us to determine element specific magnetic moments. Finally we have measured the spin polarization at the surface region by spin-resolved near-threshold photoemission and found it strongly reduced in contrast to the expected bulk value of 100%. Possible reasons for the reduced magnetization are discussed.
dc.description9 pages, 12 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0606666
dc.identifierhttp://arxiv.org/abs/cond-mat/0606666
dc.identifierPhys. Rev. B 74, 174426 (2006)
dc.identifierdoi:10.1103/PhysRevB.74.174426
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/124962
dc.subjectMaterials Science
dc.titleEpitaxial film growth and magnetic properties of Co_2FeSi
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