Photoemission evidence for a Mott-Hubbard metal-insulator transition in VO$_2$

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dc.creatorEguchi, R.
dc.creatorTaguchi, M.
dc.creatorMatsunami, M.
dc.creatorHoriba, K.
dc.creatorYamamoto, K.
dc.creatorIshida, Y.
dc.creatorChainani, A.
dc.creatorTakata, Y.
dc.creatorYabashi, M.
dc.creatorMiwa, D.
dc.creatorNishino, Y.
dc.creatorTamasaku, K.
dc.creatorIshikawa, T.
dc.creatorSenba, Y.
dc.creatorOhashi, H.
dc.creatorMuraoka, Y.
dc.creatorHiroi, Z.
dc.creatorShin, S.
dc.date2006-07-27
dc.date2008-07-30
dc.date.accessioned2026-07-07T10:00:26Z
dc.date.available2026-07-07T10:00:26Z
dc.descriptionThe temperature ($T$) dependent metal-insulator transition (MIT) in VO$_2$ is investigated using bulk sensitive hard x-ray ($\sim$ 8 keV) valence band, core level, and V 2$p-3d$ resonant photoemission spectroscopy (PES). The valence band and core level spectra are compared with full-multiplet cluster model calculations including a coherent screening channel. Across the MIT, V 3$d$ spectral weight transfer from the coherent ($d^1\underbar{\it {C}}$ final) states at Fermi level to the incoherent ($d^{0}+d^1\underbar{\it {L}}$ final) states, corresponding to the lower Hubbard band, lead to gap-formation. The spectral shape changes in V 1$s$ and V 2$p$ core levels as well as the valence band are nicely reproduced from a cluster model calculations, providing electronic structure parameters. Resonant-PES finds that the $d^1\underbar{\it{L}}$ states resonate across the V 2$p-3d$ threshold in addition to the $d^{0}$ and $d^1\underbar{\it {C}}$ states. The results support a Mott-Hubbard transition picture for the first order MIT in VO$_2$.
dc.description6 pages, 3 figures. to be published in Phys. Rev. B
dc.identifierhttps://arxiv.org/abs/cond-mat/0607712
dc.identifierhttp://arxiv.org/abs/cond-mat/0607712
dc.identifierPhys. Rev. B 78, 075115 (2008)
dc.identifierdoi:10.1103/PhysRevB.78.075115
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/168321
dc.subjectStrongly Correlated Electrons
dc.titlePhotoemission evidence for a Mott-Hubbard metal-insulator transition in VO$_2$
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