Critical behavior of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFET's

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dc.creatorFletcher, R.
dc.creatorPudalov, V. M.
dc.creatorRadcliffe, A. D. B.
dc.creatorPossanzini, C.
dc.date2000-02-28
dc.date.accessioned2026-07-07T02:36:53Z
dc.date.available2026-07-07T02:36:53Z
dc.descriptionThis letter reports thermopower and conductivity measurements through the metal-insulator transition for 2-dimensional electron gases in high mobility Si-MOSFET's. At low temperatures both thermopower and conductivity show critical behavior as a function of electron density which is very similar to that expected for an Anderson transition. In particular, when approaching the critical density from the metallic side the diffusion thermopower appears to diverge and the conductivity vanishes. On the insulating side the thermopower shows an upturn with decreasing temperature.
dc.description4 pages with 3 figures
dc.identifierhttps://arxiv.org/abs/cond-mat/0002436
dc.identifierhttp://arxiv.org/abs/cond-mat/0002436
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/16090
dc.subjectDisordered Systems and Neural Networks
dc.subjectMesoscale and Nanoscale Physics
dc.titleCritical behavior of thermopower and conductivity at the metal-insulator transition in high-mobility Si-MOSFET's
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