Terahertz sensing by beryllium and silicon delta-doped GaAs/AlAs quantum wells

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dc.creatorSeliuta, D.
dc.creatorKavaliauskas, J.
dc.creatorCechavicius, B.
dc.creatorBalakauskas, S.
dc.creatorValusis, G.
dc.creatorSherliker, B.
dc.creatorHalsall, M. P.
dc.creatorHarrison, P.
dc.creatorLachab, M.
dc.creatorKhanna, S. P.
dc.creatorLinfield, E. H.
dc.date2007-11-03
dc.date.accessioned2026-07-07T08:40:33Z
dc.date.available2026-07-07T08:40:33Z
dc.descriptionSelective sensing of terahertz (THz) radiation by beryllium and silicon delta-doped GaAs/AlAs multiple quantum wells (MQWs) is demonstrated. A sensitivity up to 0.3 V/W within 0.5{4.2 THz in silicon- and up to 1 V/W within 4.2-7.3 THz range in beryllium-doped MQWs at liquid helium temperatures is shown. The built-in electric fields as estimated from the observed Franz-Keldysh oscillations in photoreflectance spectra were found to be located close to the cap and buffer layers of MQWs and vary from 18 kV/cm up to 49 kV/cm depending on the structure design.
dc.description6 pages, 3 figures
dc.identifierhttps://arxiv.org/abs/0711.0460
dc.identifierhttp://arxiv.org/abs/0711.0460
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/141405
dc.subjectMaterials Science
dc.titleTerahertz sensing by beryllium and silicon delta-doped GaAs/AlAs quantum wells
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