Bonding Configurations and Collective Patterns of Ge Atoms Adsorbed on Si(111)-7x7

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dc.creatorWang, Y. L.
dc.creatorGao, H. -J.
dc.creatorGuo, H. M.
dc.creatorWang, Sanwu
dc.creatorPantelides, Sokrates T.
dc.date2005-02-14
dc.date.accessioned2026-07-07T03:03:45Z
dc.date.available2026-07-07T03:03:45Z
dc.descriptionWe report scanning tunneling microscopy observations of Ge deposited on the Si(111)-7x7 surface for a sequence of sub-monolayer coverages. We demonstrate that Ge atoms replace so-called Si adatoms. Initially, the replacements are random, but distinct patterns emerge and evolve with increasing coverage, till small islands begin to form. Corner adatom sites in the faulted half unit cells are preferred. First-principles density functional calculations find that adatom substitution competes energetically with a high-coordination bridge site, but atoms occupying the latter sites are highly mobile. Thus, the observed structures are indeed more thermodynamically stable.
dc.descriptionRevTex4, 4 pages, 4 figures, Fig. 2 of high quality available upon request, to appear in Phys. Rev. Lett
dc.identifierhttps://arxiv.org/abs/cond-mat/0502342
dc.identifierhttp://arxiv.org/abs/cond-mat/0502342
dc.identifierPhys. Rev. Lett. 94, 106101 (2005).
dc.identifierdoi:10.1103/PhysRevLett.94.106101
dc.identifier.urihttp://salesiana.dossiersoluciones.com/handle/123456789/25868
dc.subjectMaterials Science
dc.subjectOther Condensed Matter
dc.subjectChemical Physics
dc.subjectComputational Physics
dc.titleBonding Configurations and Collective Patterns of Ge Atoms Adsorbed on Si(111)-7x7
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